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IRFZ44V hexfet ? power mosfet parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 55 i d @ t c = 100c continuous drain current, v gs @ 10v 39 a i dm pulsed drain current 220 p d @t c = 25c power dissipation 115 w linear derating factor 0.77 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 115 mj i ar avalanche current 55 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 1.3 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 60v r ds(on) = 16.5m ? i d = 55a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated optimized for smps applications description pd - 93957b
IRFZ44V 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 2.5 v t j = 25c, i s = 51a, v gs = 0v t rr reverse recovery time ??? 70 105 ns t j = 25c, i f = 51a q rr reverse recovery charge ??? 146 219 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 55 220 starting t j = 25c, l = 89h r g = 25 ? , i as = 51a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 51a di/d
227a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.062 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 16.5 m ? v gs = 10v, i d = 31a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 24 ??? ??? s v ds = 25v, i d = 31a ??? ??? 25 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 67 i d = 51a q gs gate-to-source charge ??? ??? 18 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 25 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 13 ??? v dd = 30v t r rise time ??? 97 ??? i d = 51a t d(off) turn-off delay time ??? 40 ??? r g = 9.1 ? t f fall time ??? 57 ??? r d = 0.6 ? , see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1812 ??? v gs = 0v c oss output capacitance ??? 393 ??? v ds = 25v c rss reverse transfer capacitance ??? 103 ??? pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns i dss drain-to-source leakage current
IRFZ44V www.irf.com 3

0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 55a 1 10 100 1000 4 5 6 7 8 9 10 11 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
IRFZ44V 4 www.irf.com

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$ 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c is = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 51a v = 12v ds v = 30v ds v = 48v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.7 1.2 1.7 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
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v ds 90% 10% v gs t d(on) t r t d(off) t f %& "#
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1 0.1 % 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFZ44V 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !
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IRFZ44V www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /'0' 1
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IRFZ44V 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs.
package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier logo example : this is an irf1010 with assembly lot code 9b1m assembly lot code date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/03

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